I hope that this can be turned into a real consumer product and not wither like the ultra expensive Intel Optane.Reply
"Ultralow logic state switching energies of 10−17 J are predicted for 20 nm feature size ULTRARAM memories." Which basically means that they have not yet managed to get UltraRAM working on a 20nm process. Intel made great predictions about Optane memory, as did the developers of STT-MRAM, but all of these technologies have encountered tremendous challenges scaling down to the 7nm and now 5nm process sizes that vendors like TSMC are now selling in bulk.
I really hope they're able to come through where previous vendors have failed.Reply
> Some extrapolated numbers for UltraRAM are that it will offer "data storage times of at least 1,000 years," and its fast switching speed and program-erase cycling endurance is "one hundred to one thousand times better than flash."
1000 years ? Will be nice to tell us how they measure it. And "one hundred to one thousand times better than flash." means almost nothing. The worst flash has write endurance in the 100 cycles and the best in 10000 cycles.Reply
Optane /3D XPoint is simple enough to produce and yet the market just isn't there. The problem is NAND has gotten so fast and so cheap, it is one of those good is the energy of best moment. While NAND's roadmap may be somewhat stagnated with cost reduction. Power usage, latency, cycles and bandwidth continues to improve.Reply
The number of write cycles DRAM can endure is essentially infinite, so saying endurance is hundreds to thousands of times that of NAND Flash is meaningless.Reply